多晶硅太阳能电池毕业论文文献翻译中英文对照.doc

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1、 英 文 翻 译Polycrystalline silicon solar cells As we all know, solar energy has many advantages, photovoltaic power generation will provide the main energy of mankind, but at present it, to make solar power a large market, is the general consumer acceptance, increased solar cell efficiency and reduce p

2、roduction costs should be our overriding goal, from the current development of the international solar cell can see the trend of its silicon, polycrystalline silicon, ribbon silicon, thin film materials (including trend of its silicon, polycrystalline silicon, ribbon silicon, thin film materials (in

3、cluding microcrystalline silicon thin films, compound-based thin film and dye film). 从工业化发展来看，重心已由单晶向多晶方向发展，主要原因为；1可供应太阳电池的头尾料愈来愈少；2对太阳电池来讲，方形基片更合算，通过浇铸法和直接凝固法所获得的多晶硅可直接获得方形材料；3多晶硅的生产工艺不断取得进展，全自动浇铸炉每生产周期（50小时）可生产200公斤以上的硅锭，晶粒的尺寸达到厘米级；4由于近十年单晶硅工艺的研究与发展很快，其中工艺也被应用于多晶硅电池的生产，例如选择腐蚀发射结、背表面场、腐蚀绒面、表面和体钝化、细

4、金属栅电极，采用丝网印刷技术可使栅电极的宽度降低到50微米，高度达到15微米以上，快速热退火技术用于多晶硅的生产可大大缩短工艺时间，单片热工序时间可在一分钟之内完成，采用该工艺在100平方厘米的多晶硅片上作出的电池转换效率超过14。From industrial development, it has been the focus of the direction of single crystal to polycrystalline, mainly due to; （1） the beginning and end of solar cell materials can supply le

5、ss and less; （2） in terms of the solar cell, a square substrate is more cost-effective, by direct coagulation casting method and obtained direct access to a square polysilicon materials; （3） of polysilicon production technology continue to make progress, casting furnace automatic production cycle of

6、 each (50 hours) can produce over 200 kg ingots, grain size to achieve centimeter level; （4） in recent years as research and development of silicon technology quickly, in which technology has been applied to the production of polycrystalline silicon cells, such as selective etching the emitter, back

7、 surface field, corrosion suede , surface and bulk passivation, thin metal gate electrode, using screen-printing technology enables the gate electrode width down to 50 microns to 15 microns high, rapid thermal annealing technology for polysilicon production process can significantly shorten the time

8、, single time of thermal process can be completed within a minute using this technology in the 100 square centimeters of silicon chip to make the cell conversion efficiency of over 14%. 据报道，目前在5060微米多晶硅衬底上制作的电池效率超过16。It was reported in 50 to 60 micron silicon substrate produced more than 16% cell ef

9、ficiency. 利用机械刻槽、丝网印刷技术在100平方厘米多晶上效率超过17，无机械刻槽在同样面积上效率达到16，采用埋栅结构，机械刻槽在130平方厘米的多晶上电池效率达到15.8。 Mechanical groove, screen printing technology in polycrystalline on the efficiency of more than 17%, no mechanical groove in the same area on the efficiency of 16%, with buried gate structure, mechanical gr

10、oove 130 on a square centimeter of polycrystalline cell efficiency of 15.8%.The following two aspects of the polysilicon to discuss battery technology.Laboratory efficient battery technology Laboratory techniques often do not consider the cost of battery production and mass production can only achie

11、ve maximum efficiency of the method and means to provide specific materials and processes that can achieve the limit.1. On the absorption of lightFor the optical absorption is mainly:(1) reduce the surface reflection;(2) Change the path of light in the cell body;(3) using the back reflection.For sil

12、icon, anisotropic chemical etching method applied in (100) surface produced textured pyramid-shaped, lower surface light reflection. 但多晶硅晶向偏离（100）面，采用上面的方法无法作出均匀的绒面，目前采用下列方法:But silicon crystal to deviate from the (100) surface, using the above methods can not make even the suede, the current use of

13、 the following methods:（1） laser grooveGroove with a laser method can be produced in the polysilicon surface, inverted pyramid structure, in 500900nm wavelength range, reflectance was 4 to 6%, with double-layer antireflection coating surface produced considerable. 而在（100）面单晶硅化学制作绒面的反射率为11。In the (10

14、0) reflection of silicon chemical production rate of 11% of the flock. 用激光制作绒面比在光滑面镀双层减反射膜层（ZnS/MgF2）电池的短路电流要提高4左右，这主要是长波光（波长大于800nm）斜射进入电池的原因Produced by laser textured surface than in the smooth double-layer antireflection coating film (ZnS/MgF2) short circuit current to increase by about 4%, mainl

15、y long-wave light (wavelength greater than 800nm) the reasons for slanting into the battery. 激光制作绒面存在的问题是在刻蚀中，表面造成损伤同时引入一些杂质，要通过化学处理去除表面损伤层。Laser production of suede problems in etching, surface damage caused by the introduction of a number of impurities at the same time, through chemical treatment

16、to remove surface damage layer. 该方法所作的太阳电池通常短路电流较高，但开路电压不太高，主要原因是电池表面积增加，引起复合电流提高。Solar cells made by this method are usually higher short circuit current, open circuit voltage is not high, mainly due to cell surface area increased, the recombination current increase.（2） Chemical grooveApplication o

17、f mask (Si3N4 or SiO2) isotropic corrosion, etching solutions for acid etching solutions, but also for the higher concentration of sodium hydroxide or potassium hydroxide solution, the method can not create the kind formed by anisotropic etching cone-like structure. 据报道，该方法所形成的绒面对7001030微米光谱范围有明显的减反

18、射作用。According to reports, the approach down the face of the formation of micron spectral range 700 to 1030 significantly reduced reflex. 但掩膜层一般要在较高的温度下形成，引起多晶硅材料性能下降，特别对质量较低的多晶材料，少子寿命缩短。But the mask layer will be formed at higher temperatures, causing decreased performance polysilicon materials, esp

19、ecially for lower quality polycrystalline materials, reduce the minority carrier lifetime. 应用该工艺在225cm2的多晶硅上所作电池的转换效率达到16.4%。Application of the technology made of polysilicon in cell conversion efficiency of 16.4%. 掩膜层也可用丝网印刷的方法形成。Mask layer screen printing method can also be formed.（3） reactive ion

20、 corrosion (RIE)This method is a non-mask etching process, the formation of suede particularly low reflectivity in the spectral range 450 to 1000 micron reflectivity can be less than 2%. 仅从光学的角度来看，是一种理想的方法，但存在的问题是硅表面损伤严重，电池的开路电压和填充因子出现下降。Only from the optical point of view, is an ideal method, but p

21、roblem is serious silicon surface damage, the battery open circuit voltage and fill factor decreased.（4） produced antireflection filmFor efficient solar cells, the most common and most effective way is to double-layer antireflection coatings deposited ZnS/MgF2, its optimal thickness depends on the t

22、hickness of the oxide layer below the surface characteristics and battery, for example, the surface is smooth or textured surface，anti-reflection technology has evaporated Ta2O5, PECVD deposition Si3N3 so. ZnO导电膜也可作为减反材料。ZnO conductive film can be used as anti-reflective material.2. MetallizationIn

23、the efficient production of the battery, the metal electrode to the battery design parameters such as surface doping concentration, PN junction depth, the metal material to match. 实验室电池一般面积比较小（面积小于4cm2），所以需要细金属栅线（小于10微米），一般采用的方法为光刻、电子束蒸发、电子镀。General area of small laboratory cell (area less than 4cm2

24、), so they need small metal gate line (less than 10 microns), the general approach to lithography, electron beam evaporation, e-coating.Large-scale production of industrial plating process is also used, but the combination of evaporation and lithography, do not belong to low-cost technology.3. PN ju

25、nction formation technology（1） emitter formation and phosphorus getteringFor efficient solar cells, emitter diffusion formation of choice commonly used in the formation of heavy metal impurities in the region below the electrode in the spread between the electrodes to achieve light levels, the shall

26、ow emitter diffusion is increased concentration of cell response to blue light, and also allows silicon surface easily passivated. 扩散的方法有两步扩散工艺、扩散加腐蚀工艺和掩埋扩散工艺。Two-step diffusion method diffusion process, diffusion process and increase corrosion buried diffusion process. 目前采用选择扩散，1515cm2电池转换效率达到16.4%

27、，n+、n+区域的表面方块电阻分别为20和80.Currently used selection proliferation, 15 15 cell conversion efficiency of 16.4%, n + +, n + sheet resistance of the surface region were 20 and 80.For Mc-Si materials, expansion of phosphorus gettering effect on the battery has been widely studied, a longer period of phospho

28、rus gettering process (usually 3 to 4 hours), make some of Mc-Si of the minority carrier diffusion length increase of two orders of magnitude.（2） the formation of back surface field and aluminum getteringIn Mc-Si cell, the back p + p junction by the formation of uniform diffusion of aluminum or boro

29、n, boron source is generally BN, BBr, APCVD SiO2: B2O8 such as evaporation or diffusion of aluminum screen printing of aluminum, 800 degrees completed sintering , on the role of aluminum gettering carried out extensive research, and in different phosphorus diffusion gettering, aluminum gettering at

30、a relatively low temperature. 其中体缺陷也参与了杂质的溶解和沉积，而在较高温度下，沉积的杂质易于溶解进入硅中，对McSi产生不利的影响。Physical defects which also involved the dissolution and deposition of impurities, while in higher temperatures, the deposition of impurities easily dissolve into the silicon, on the Mc-Si have a negative impact. 到目前为

31、至，区域背场已应用于单晶硅电池工艺中，但在多晶硅中，还是应用全铝背表面场结构。Far, to the regional background field has been applied to silicon solar cell technology, but in the polysilicon, the application of aluminum or the back surface field structure.（3） Double Mc-Si cellsMc-Si double the battery positive side for the conventional st

32、ructure, on the back for the N + and P + cross-cutting structure, so that generated a positive light, but in the back of the photo birth rate near the back electrode can be effectively absorbed. 背电极作为对正面电极的有效补充，也作为一个独立的栽流子收集器对背面光照和散射光产生作用，据报道，在AM1.5条件下，转换效率超过19。 Back electrode as an effective comple

33、ment to the positive electrode, also planted as an independent flow of sub-collector on the back of the light and the scattered light to be effective, it was reported in the AM1.5 conditions, the conversion efficiency of over 19%.360毕业设计网 4. Surface and bulk passivationFor Mc-Si, due to higher grain

34、 boundary exist, point defects (vacancies, interstitial atoms, metal impurities, oxygen and nitrogen and their compounds) and in vivo defect on the surface passivation is particularly important, in addition to the previously mentioned The gettering, the passivation process has a number of ways, by t

35、hermal oxidation to silicon dangling bonds saturated is a relatively common method, make Si-SiO2 interface recombination velocity greatly decreased, the passivation effect depends on the launching area surface concentration, the interface state density and the electron and hole cross sections were f

36、loating. 在氢气氛中退火可使钝化效果更加明显。Annealed in hydrogen atmosphere can passivation effect is more obvious. 采用PECVD淀积氮化硅近期正面十分有效，因为在成膜的过程中具有加氢的效Nitride deposited by PECVD the recent positive is very effective because the process of film has the effect of hydrogenation. 该工艺也可应用于规模化生产中。 The process can also be

37、 applied to large scale production. 应用Remote PECVD Si3N4可使表面复合速度小于20cm/s。 Application of Remote PECVD Si3N4 surface recombination velocity is less than can 20cm / s.多晶硅太阳能电池众所周知，利用太阳能有许多优点，光伏发电将为人类提供主要的能源，但目前来讲，要使太阳能发电具有较大的市场，被广大的消费者接受，提高太阳电池的光电转换效率，降低生产成本应该是我们追求的最大目标，从目前国际太阳电池的发展过程可以看出其发展趋势为单晶硅、多晶硅

38、、带状硅、薄膜材料（包括微晶硅基薄膜、化合物基薄膜及染料薄膜）。从工业化发展来看，重心已由单晶向多晶方向发展，主要原因为；（1）可供应太阳电池的头尾料愈来愈少；（2） 对太阳电池来讲，方形基片更合算，通过浇铸法和直接凝固法所获得的多晶硅可直接获得方形材料；（3）多晶硅的生产工艺不断取得进展，全自动浇铸炉每生产周期（50小时）可生产200公斤以上的硅锭，晶粒的尺寸达到厘米级；（4）由于近十年单晶硅工艺的研究与发展很快，其中工艺也被应用于多晶硅电池的生产，例如选择腐蚀发射结、背表面场、腐蚀绒面、表面和体钝化、细金属栅电极，采用丝网印刷技术可使栅电极的宽度降低到50微米，高度达到15微米以上，快速热

39、退火技术用于多晶硅的生产可大大缩短工艺时间，单片热工序时间可在一分钟之内完成，采用该工艺在100平方厘米的多晶硅片上作出的电池转换效率超过14。据报道，目前在5060微米多晶硅衬底上制作的电池效率超过16。利用机械刻槽、丝网印刷技术在100平方厘米多晶上效率超过17，无机械刻槽在同样面积上效率达到16，采用埋栅结构，机械刻槽在130平方厘米的多晶上电池效率达到15.8。 下面从两个方面对多晶硅电池的工艺技术进行讨论。实验室高效电池工艺实验室技术通常不考虑电池制作的成本和是否可以大规模化生产，仅仅研究达到最高效率的方法和途径，提供特定材料和工艺所能够达到的极限。1.关于光的吸收对于光吸收主要是：

40、（1）降低表面反射；（2）改变光在电池体内的路径；（3）采用背面反射。对于单晶硅，应用各向异性化学腐蚀的方法可在（100）表面制作金字塔状的绒面结构，降低表面光反射。但多晶硅晶向偏离（100）面，采用上面的方法无法作出均匀的绒面，目前采用下列方法:（1）激光刻槽用激光刻槽的方法可在多晶硅表面制作倒金字塔结构，在500900nm光谱范围内，反射率为46，与表面制作双层减反射膜相当。而在（100）面单晶硅化学制作绒面的反射率为11。用激光制作绒面比在光滑面镀双层减反射膜层（ZnS/MgF2）电池的短路电流要提高4左右，这主要是长波光（波长大于800nm）斜射进入电池的原因。激光制作绒面存在的问题是

41、在刻蚀中，表面造成损伤同时引入一些杂质，要通过化学处理去除表面损伤层。该方法所作的太阳电池通常短路电流较高，但开路电压不太高，主要原因是电池表面积增加，引起复合电流提高。（2）化学刻槽应用掩膜（Si3N4或SiO2）各向同性腐蚀，腐蚀液可为酸性腐蚀液，也可为浓度较高的氢氧化钠或氢氧化钾溶液，该方法无法形成各向异性腐蚀所形成的那种尖锥状结构。据报道，该方法所形成的绒面对7001030微米光谱范围有明显的减反射作用。但掩膜层一般要在较高的温度下形成，引起多晶硅材料性能下降，特别对质量较低的多晶材料，少子寿命缩短。应用该工艺在225平方米的多晶硅上所作电池的转换效率达到16.4%。掩膜层也可用丝网印

42、刷的方法形成。（3）反应离子腐蚀（RIE）该方法为一种无掩膜腐蚀工艺，所形成的绒面反射率特别低，在4501000微米光谱范围的反射率可小于2。仅从光学的角度来看，是一种理想的方法，但存在的问题是硅表面损伤严重，电池的开路电压和填充因子出现下降。（4）制作减反射膜层对于高效太阳电池，最常用和最有效的方法是蒸镀ZnS/MgF2双层减反射膜，其最佳厚度取决于下面氧化层的厚度和电池表面的特征，例如，表面是光滑面还是绒面，减反射工艺也有蒸镀Ta2O5, PECVD沉积 Si3N3等。ZnO导电膜也可作为减反材料。2.金属化技术在高效电池的制作中，金属化电极必须与电池的设计参数，如表面掺杂浓度、PN结深，

43、金属材料相匹配。实验室电池一般面积比较小（面积小于4平方厘米），所以需要细金属栅线（小于10微米），一般采用的方法为光刻、电子束蒸发、电子镀。工业化大生产中也使用电镀工艺，但蒸发和光刻结合使用时，不属于低成本工艺技术。3.PN结的形成技术（1）发射区形成和磷吸杂对于高效太阳能电池，发射区的形成一般采用选择扩散，在金属电极下方形成重杂质区域而在电极间实现浅浓度扩散，发射区的浅浓度扩散即增强了电池对蓝光的响应，又使硅表面易于钝化。扩散的方法有两步扩散工艺、扩散加腐蚀工艺和掩埋扩散工艺。目前采用选择扩散，电池转换效率达到16.4%，n+、n+区域的表面方块电阻分别为20和80.对于McSi材料，扩磷

44、吸杂对电池的影响得到广泛的研究，较长时间的磷吸杂过程（一般34小时），可使一些McSi的少子扩散长度提高两个数量级。在对衬底浓度对吸杂效应的研究中发现，即便对高浓度的衬第材料，经吸杂也能够获得较大的少子扩散长度（大于200微米），电池的开路电压大于638mv, 转换效率超过17。（2）背表面场的形成及铝吸杂技术在McSi电池中，背p+p结由均匀扩散铝或硼形成，硼源一般为BN、BBr、APCVD SiO2：B2O8等，铝扩散为蒸发或丝网印刷铝，800度下烧结所完成，对铝吸杂的作用也开展了大量的研究，与磷扩散吸杂不同，铝吸杂在相对较低的温度下进行。其中体缺陷也参与了杂质的溶解和沉积，而在较高温度下

45、，沉积的杂质易于溶解进入硅中，对McSi产生不利的影响。到目前为至，区域背场已应用于单晶硅电池工艺中，但在多晶硅中，还是应用全铝背表面场结构。（3）双面McSi电池McSi双面电池其正面为常规结构，背面为N和P相互交叉的结构，这样，正面光照产生的但位于背面附近的光生少子可由背电极有效吸收。背电极作为对正面电极的有效补充，也作为一个独立的栽流子收集器对背面光照和散射光产生作用，据报道，在AM1.5条件下，转换效率超过19。4. 表面和体钝化技术对于McSi，因存在较高的晶界、点缺陷（空位、填隙原子、金属杂质、氧、氮及他们的复合物）对材料表面和体内缺陷的钝化尤为重要，除前面提到的吸杂技术外，钝化工艺有多种方法，通过热氧化使硅悬挂键饱和是一种比较常用的方法，可使Si-SiO2界面的复合速度大大下降，其钝化效果取决于发射区的表面浓度、界面态密度和电子、空穴的浮获截面。在氢气氛中退火可使钝化效果更加明显。采用PECVD淀积氮化硅近期正面十分有效，因为在成膜的过程中具有加氢的效果。该工艺也可应用于规模化生产中。应用Remote PECVD Si3N4可使表面复合速度小于20cm/s。- 8 -